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 MAX8538EEI Rev. A
RELIABILITY REPORT FOR MAX8538EEI PLASTIC ENCAPSULATED DEVICES
March 31, 2004
MAXIM INTEGRATED PRODUCTS
120 SAN GABRIEL DR. SUNNYVALE, CA 94086
Written by
Reviewed by
Jim Pedicord Quality Assurance Manager, Reliability Operations
Bryan J. Preeshl Quality Assurance Managing Director
Conclusion The MAX8538 successfully meets the quality and reliability standards required of all Maxim products. In addition, Maxim's continuous reliability monitoring program ensures that all outgoing product will continue to meet Maxim's quality and reliability standards. Table of Contents I. ........Device Description II. ........Manufacturing Information III. .......Packaging Information V. ........Quality Assurance Information VI. .......Reliability Evaluation IV. .......Die Information .....Attachments
I. Device Description A. General The MAX8538 is configured as a dual out-of-phase controller for point-of-load supplies. Each buck controller can source or sink up to 25A of current, while the termination reference can supply up to 15mA output. The MAX8538 uses constant-frequency voltage-mode architecture with operating frequencies of 200kHz to 1.4MHz. An internal high- bandwidth (25MHz) operational amplifier is used as an error amplifier to regulate the output voltage. This allows fast transient response, reducing the number of output capacitors. An all-N-FET design optimizes efficiency and cost. The MAX8538 has a 1% accurate reference. The controller uses a high-side current-sense architecture for current limiting. ILIM pins allow the setting of an adjustable, lossless current limit for different combinations of load current and RDSON. Alternately, more accurate overcurrent limit is achieved by using a sense resistor in series with the high-side FET. Overvoltage protection is achieved by latching off the high-side MOSFET and latching on the low-side MOSFET when the output voltage exceeds 17% of its set output. Independent enable, power-good, and soft-start features enhance flexibility. B. Absolute Maximum Ratings Item V+ to GND AVL, VL to GND PGND to GND FB_, EN_, POK_ to GND REFIN, VTTR, FREQ, SS_, COMP_ to GND BST_, ILIM_ to GND DH1 to LX1 DH2 to LX2 LX_ to BST_ LX_ to GND DL_ to PGND Operating Temperature Range Junction Temperature Storage Temperature Range Lead Temperature (soldering, 10s) Continuous Power Dissipation (TA = +70C) 28-Pin QSOP Derates above +70C 28-Pin QSOP
Rating -0.3V to +25V -0.3V to +6V -0.3V to +0.3V -0.3V to +6V .-0.3V to (AVL + 0.3V) -0.3V to +30V -0.3V to (BST1 + 0.3V) -0.3V to (BST2 + 0.3V) -6V to +0.3V -2V to +25V -0.3V to (VL + 0.3V) -40C to +85C +150C -65C to +150C +300C 860mW 10.8mW/C
II. Manufacturing Information A. Description/Function: Dual-Synchronous Buck Controllers for Point-of-Load, Tracking, and DDR Memory Power Supplies B. Process: C. Number of Device Transistors: D. Fabrication Location: E. Assembly Location: F. Date of Initial Production: S8 (Standard 0.8 micron silicon gate CMOS) 5504 California, USA Philippines or Thailand January, 2004
III. Packaging Information A. Package Type: B. Lead Frame: C. Lead Finish: D. Die Attach: E. Bondwire: F. Mold Material: G. Assembly Diagram: H. Flammability Rating: 28-Pin QSOP Copper Solder Plate Silver-Filled Epoxy Gold (1.3 mil dia.) Epoxy with silica filler # 05-9000-0559 Class UL94-V0
I. Classification of Moisture Sensitivity per JEDEC standard J-STD-020-A: Level 1
IV. Die Information A. Dimensions: B. Passivation: C. Interconnect: D. Backside Metallization: E. Minimum Metal Width: F. Minimum Metal Spacing: G. Bondpad Dimensions: H. Isolation Dielectric: I. Die Separation Method: 140 x 80 mils Si3N4/SiO2 (Silicon nitride/ Silicon dioxide) Aluminum/Si (Si = 1%) None 0.8 microns (as drawn) 0.8 microns (as drawn) 5 mil. Sq. SiO2 Wafer Saw
V. Quality Assurance Information A. Quality Assurance Contacts: Jim Pedicord (Manager, Reliability Operations) Bryan Preeshl (Managing Director of QA) Kenneth Huening (Vice President) 0.1% for all electrical parameters guaranteed by the Datasheet. 0.1% For all Visual Defects.
B. Outgoing Inspection Level:
C. Observed Outgoing Defect Rate: < 50 ppm D. Sampling Plan: Mil-Std-105D VI. Reliability Evaluation A. Accelerated Life Test The results of the 135C biased ( static) life test are shown in Table 1. Using these results, the Failure Rate () is calculated as follows: = 1 = MTTF 1.83 192 x 4389 x 48 x 2 (Chi square value for MTTF upper limit)
Temperature Acceleration factor assuming an activation energy of 0.8eV = 22.62 x 10-9 = 22.62 F.I.T. (60% confidence level @ 25C)
This low failure rate represents data collected from Maxim's reliability monitor program. In addition to routine production Burn-In, Maxim pulls a sample from every fabrication process three times per week and subjects it to an extended Burn-In prior to shipment to ensure its reliability. The reliability control level for each lot to be shipped as standard product is 59 F.I.T. at a 60% confidence level, which equates to 3 failures in an 80 piece sample. Maxim performs failure analysis on any lot that exceeds this reliability control level. Attached Burn-In Schematic (Spec. # 06-6190) shows the static Burn-In circuit. Maxim also performs quarterly 1000 hour life test monitors. This data is published in the Product Reliability Report (RR-1M). B. Moisture Resistance Tests Maxim pulls pressure pot samples from every assembly process three times per week. Each lot sample must meet an LTPD = 20 or less before shipment as standard product. Additionally, the industry standard 85C/85%RH testing is done per generic device/package family once a quarter. C. E.S.D. and Latch-Up Testing The PN02-1 die type has been found to have all pins able to withstand a transient pulse of <200V, per MilStd-883 Method 3015 (reference attached ESD Test Circuit). Latch-Up testing has shown that this device withstands a current of 250mA.
Table 1 Reliability Evaluation Test Results MAX8538EEI TEST ITEM TEST CONDITION FAILURE IDENTIFICATION SAMPLE SIZE NUMBER OF FAILURES
PACKAGE
Static Life Test (Note 1) Ta = 135C Biased Time = 192 hrs. Moisture Testing (Note 2) Pressure Pot Ta = 121C P = 15 psi. RH= 100% Time = 168hrs. Ta = 85C RH = 85% Biased Time = 1000hrs.
DC Parameters & functionality
48
0
DC Parameters & functionality
QFN
77
0
85/85
DC Parameters & functionality
77
0
Mechanical Stress (Note 2) Temperature Cycle -65C/150C 1000 Cycles Method 1010 DC Parameters & functionality 77 0
Note 1: Life Test Data may represent plastic DIP qualification lots. Note 2: Generic Package/Process data
Attachment #1 TABLE II. Pin combination to be tested. 1/ 2/
Terminal A (Each pin individually connected to terminal A with the other floating) 1. 2. All pins except VPS1 3/ All input and output pins
Terminal B (The common combination of all like-named pins connected to terminal B) All VPS1 pins All other input-output pins
1/ Table II is restated in narrative form in 3.4 below. 2/ No connects are not to be tested. 3/ Repeat pin combination I for each named Power supply and for ground (e.g., where VPS1 is VDD, VCC, VSS, VBB, GND, +VS, -VS, VREF, etc). 3.4 a. b. Pin combinations to be tested. Each pin individually connected to terminal A with respect to the device ground pin(s) connected to terminal B. All pins except the one being tested and the ground pin(s) shall be open. Each pin individually connected to terminal A with respect to each different set of a combination of all named power supply pins (e.g., V , or V SS1 SS2 or V SS3 or V CC1 , or V CC2 ) connected to terminal B. All pins except the one being tested and the power supply pin or set of pins shall be open. Each input and each output individually connected to terminal A with respect to a combination of all the other input and output pins connected to terminal B. All pins except the input or output pin being tested and the combination of all the other input and output pins shall be open.
c.
TERMINAL C
R1 S1 R2
TERMINAL A REGULATED HIGH VOLTAGE SUPPLY
S2 C1
DUT SOCKET
SHORT CURRENT PROBE (NOTE 6)
TERMINAL B
R = 1.5k C = 100pf
TERMINAL D Mil Std 883D Method 3015.7 Notice 8
ONCE PER SOCKET
9K
ONCE PER BOARD
-2.5V
1 2 3 4 5
28 27 26 25 24 23 22 21 20 19 18 17 16 15
1K
6 7 8 9
4.7 uF 10 Ohms
+20V
1 MEGHz 10 11 12 13 14
40 K
20 K
10 nF
10 K
10 nF
1 uF
10 uF
DEVICES: MAX8537/8538/8539 PACKAGE: 28-QSOP MAX. EXPECTED CURRENT = 12mA (+20V), 250uA (-2.5V)
DRAWN BY: TEK TAN NOTES:
DOCUMENT I.D. 06-6190
REVISION A
MAXIM
TITLE: BI
Circuit: MAX8537/8538/8539 (PN02)
PAGE
2


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